Document Type
Article
Publication Date
2009
Abstract
Stain etchants made from (HF+V(2)O(5)) or (HF+FeCl(3)center dot 6H(2)O+HCl or H(2)SO(4)) exhibited virtually no initiation time before the formation of porous silicon. Etching with Fe(III) solutions for extended periods resulted in a unique dual layer structure that can reach a thickness >10 mu m and exhibited not only red-orange but also green photoluminescence (PL). Etching with (CeF(4)+H(2)SO(4)) produced extremely uniform films. Visible PL was observed immediately after etching except for those films produced with (CeF(4)+H(2)SO(4)), which required several days of air exposure before bright and robust PL developed.
Publication Title
Electrochemical and Solid State Letters
ISSN
1099-0062
Publisher
Electrochemical Society Inc
Volume
12
Issue
4
DOI
10.1149/1.3074333
Recommended Citation
Dudley, M. E., & Kolasinski, K. (2009). Stain Etching with Fe(III), V(V), and Ce(IV) to Form Microporous Silicon. Electrochemical and Solid State Letters, 12(4) http://dx.doi.org/10.1149/1.3074333
Comments
© The Electrochemical Society, Inc. 2009. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published at http://esl.ecsdl.org/content/12/4/D22.abstract.